收藏本站
IRF710S, SiHF710S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJA
R thJC
TYP.
-
-
-
MAX.
62
40
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 400 V, V GS = 0 V
V DS = 320 V, V GS = 0 V, T J = 125 °C
400
-
2.0
-
-
-
-
0.47
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 1.2 A b
-
-
3.6
?
Forward Transconductance
g fs
V DS = 50 V, I D = 1.2
A b
1.0
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
170
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
34
6.3
-
-
-
17
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 2.0 A, V DS = 320 V,
see fig. 6 and 13 b
-
-
3.4
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
8.0
8.5
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 200 V, I D = 2.0 A,
R g = 24 ? , R D = 95 ? , see fig. 10 b
-
-
-
9.9
21
11
-
-
-
ns
Internal Drain Inductance
Internal Source Inductance
L D
L S
Between lead,
6 mm (0.25") from
package and center of
die contact
G
D
S
-
-
4.5
7.5
-
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
2.0
6.0
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 2.0 A, V GS = 0 V b
T J = 25 °C, I F = 2.0 A, dI/dt = 100 A/μs b
-
-
-
-
240
0.85
1.6
540
1.6
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 91042
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF7201TR MOSFET N-CH 30V 7.3A 8-SOIC
IRF7204 MOSFET P-CH 20V 5.3A 8-SOIC
IRF7207TR MOSFET P-CH 20V 5.4A 8-SOIC
IRF720 MOSFET N-CH 400V 3.3A TO-220AB
IRF7220 MOSFET P-CH 14V 11A 8-SOIC
IRF7233TR MOSFET P-CH 12V 9.5A 8-SOIC
IRF730ASTRRPBF MOSFET N-CH 400V 5.5A D2PAK
IRF7321D2TR MOSFET P-CH 30V 4.7A 8-SOIC
相关代理商/技术参数
IRF710STRR 功能描述:MOSFET N-CH 400V 2A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF710STRRPBF 功能描述:MOSFET N-Chan 400V 2.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF711 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF711R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2A I(D) | TO-220AB
IRF712 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF712R 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF712S2497 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF713 制造商:n/a 功能描述:IRF713